IRHF597110 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

PD - 94176C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF597110 100K Rads (Si)
IRHF593110 300K Rads (Si)
RDS(on)
1.0Ω
1.0Ω
ID
-2.6A
-2.6A
IRHF597110
100V, P-CHANNEL
4# TECHNOLOGY
c
TO-39
International Rectifier’s R5^TM technology provides _Features:
high performance power MOSFETs for space appli- _{n Single Event Effect (SEE) Hardened}
cations. These devices have been characterized for _n
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
n
n
of low RDS(on) and low gate charge reduces the power _n
losses in switching applications such as DC to DC _n
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
n
n
n
Ultra Low RDS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
eters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-2.6
-1.6
A
-10.4
15
W
0.12
W/°C
±20
V
30
mJ
-2.6
A
1.5
mJ
6.6
V/ns
-55 to 150
o_C
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
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12/03/03