IRG7PH35UPBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

45
40
35
30
25
Square Wave:
20
V_CC
15
I
10
Diode as specified
5
0
0.1
60
IRG7PH35UPbF/IRG7PH35U-EP
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
250
50
200
40
150
30
20
100
10
50
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
100
0
0 25 50 75 100 125 150 175
TC (°C)
Fig. 3- Power Dissipation vs. Case
Temperature
1000
10 μs
10
100 μs
1
1ms
DC
0.1
1
10
100
1000 10000
VCE (V)
Fig. 4 - Forward SOA
T_C = 25°C, T_J ≤ 175°C; V_GE =15V
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100
10
1
10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA
T_J = 175°C; V_GE = 20V
10000
3