IRG7PH35UPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR
PD - 97479
IRG7PH35UPbF
IRG7PH35U-EP
Features
• Low V_{CE (ON)} trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for I_LM
• Positive V_{CE (ON)} temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low V_{CE (ON)} and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
C
G
E
n-channel
C
V_CES = 1200V
I _NOMINAL = 20A
T_J(max) = 175°C
V_CE(on) typ. = 1.9V
C
GC ^E
TO-247AC
IRG7PH35UPbF
GC ^E
TO-247AD
IRG7PH35U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C
Continuous Collector Current
I_C @ T_C = 100°C
Continuous Collector Current
I_NOMINAL
Nominal Current
I_CM
I_LM
Pulse Collector Current, V_GE=15V
c Clamped Inductive Load Current, V_GE=20V
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C
Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Rθ_JC (IGBT)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
R_θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
55
35
20
60
80
±30
210
105
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.70
–––
–––
Units
V
A
V
W
°C
Units
°C/W
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3/26/10