English
Language : 

IRFS7530-7PPBF_15 Datasheet, PDF (3/11 Pages) International Rectifier – Brushed Motor drive applications
IRFS7530-7PPbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
249 ––– –––
––– 236 354
––– 62 –––
––– 73 –––
––– 163 –––
––– 24 –––
––– 102 –––
––– 168 –––
––– 79 –––
––– 12960 –––
––– 1270 –––
––– 760 –––
S VDS = 10V, ID =100A
ID = 100A
nC VDS = 30V
VGS = 10V
VDD = 30V
ns
ID = 100A
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1248 –––
Coss eff.(TR) Output Capacitance (Time Related)
––– 1590 –––
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
IS
ISM
VSD
dv/dt
trr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
8.5
48
50
72
83
2.5
Max. Units
Conditions
338
1450
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
1.2 V TJ = 25°C,IS = 100A,VGS = 0V 
––– V/ns TJ = 175°C,IS =100A,VDS = 60V
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 100A,
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
––– A TJ = 25°C 
3 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 5, 2015