IRFS7530-7PPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Brushed Motor drive applications

IRFS7530-7PPbF
Absolute Maximium Rating
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E_{AS (Thermally limited)} Single Pulse Avalanche Energy 
E_{AS (Thermally limited) Single Pulse Avalanche Energy ï€} 
I_AR
Avalanche Current 
E_AR
Repetitive Avalanche Energy 
Thermal Resistance
Symbol
R_JC
R_JA
Parameter
Junction-to-Case 
Junction-to-Ambient 
Max.
338
239
240
1450
375
2.5
± 20
-55 to + 175
300
526
1029
See Fig 14, 15, 23a, 23b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
33
1.15
1.4
–––
–––
–––
–––
–––
2.2
Max.
–––
–––
1.4
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V V_GS = 0V, I_D = 250µA
mV/°C Reference to 25°C, I_D = 1mA 
m VGS = 10V, ID = 100A 
m VGS = 6.0V, ID = 50A 
V V_DS = V_GS, I_D = 250µA
µA V_DS = 60 V, V_GS = 0V
V_DS = 60V,V_GS = 0V,T_J =125°C
nA V_GS = 20V
V_GS = -20V

Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by T_Jmax, starting T_J = 25°C, L = 105µH, R_G = 50, I_AS = 100A, V_GS =10V.
I_SD  100A, di/dt  1575A/µs, V_DD  V_(BR)DSS, T_J 175°C.
Pulse width  400µs; duty cycle  2%.
 C_oss eff. (TR) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
 C_oss eff. (ER) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 to 80% V_DSS.
 R_ is measured at T_J approximately 90°C.
 Limited by T_Jmax, starting T_J = 25°C, L = 1mH, R_G = 50, I_AS = 45A, V_GS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 5, 2015