IRFR1111 Datasheet, PDF (3/10 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A⑤)

1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
0.1
4.5V
0.01
0.1
20µs PULSE WIDTH
TJ= 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRFR/U3303
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
20µs PULSE WIDTH
4.5V TJ= 150 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 150 °C
10
T_J = 25° C
1
0.1
4
V _DS =1255VV
20µs PULSE WIDTH
5
6
7
8
9
10
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0
I_D = 30A
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature