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IRFR1111 Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A⑤) | |||
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IRFR/U3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
30 âââ âââ
âââ 0.032 âââ
âââ âââ 0.031
2.0 âââ 4.0
9.3 âââ âââ
âââ âââ 25
âââ âââ 250
âââ âââ 100
âââ âââ -100
âââ âââ 29
âââ âââ 7.3
âââ âââ 13
âââ 11 âââ
âââ 99 âââ
âââ 16 âââ
âââ 28 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 750 âââ
âââ 400 âââ
âââ 140 âââ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A Â
VDS = VGS, ID = 250µA
VDS = 25V, ID = 18A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 18A
VDS = 24V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 15V
ID = 18A
RG = 13â¦
RD = 0.8â¦, See Fig. 10 Â
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contactÂ
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 33Â
A showing the
integral reverse
G
âââ âââ 120
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 18A, VGS = 0V Â
âââ 53 80 ns TJ = 25°C, IF = 18A
âââ 94 140 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 590µH
RG = 25â¦, IAS = 18A. (See Figure 12)
 ISD ⤠18A, di/dt ⤠140A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Caculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A.
 This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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