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IRFP7530PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed Motor drive applications | |||
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IRFP7530PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qgâ Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
242 âââ âââ
âââ 274 411
âââ 64 âââ
âââ 83 âââ
âââ 191 âââ
âââ 52 âââ
âââ 141 âââ
âââ 172 âââ
âââ 104 âââ
âââ 13703 âââ
âââ 1266 âââ
âââ 806 âââ
âââ 1267 âââ
S VDS = 10V, ID =100A
ID = 100A
nC VDS = 30V
VGS = 10V
VDD = 30V
ns
ID = 100A
RG= 2.7ïï
VGS = 10Vï
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz, See Fig.7
VGS = 0V, VDS = 0V to 48Vï
Coss eff.(TR) Output Capacitance (Time Related)
âââ 1630 âââ
VGS = 0V, VDS = 0V to 48Vï
Diode Characteristics
Symbol
IS
ISM
VSD
dv/dt
trr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)ï ïï
Diode Forward Voltage
Peak Diode Recovery dv/dtïï
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
8.1
51
54
86
102
2.9
Max. Units
Conditions
281ï
760
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
1.2 V TJ = 25°C,IS = 100A,VGS = 0V ï
ï
âââ V/ns TJ = 175°C,IS =100A,VDS = 60Vï
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 100A,
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs ï
ï ï
âââ A TJ = 25°C ï
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November 7, 2014
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