IRFP7530PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Brushed Motor drive applications

IRFP7530PbF
Absolute Maximum Rating
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Max.
281
199
195
760
341
2.3
Units
A
W
W/°C
V_GS
Gate-to-Source Voltage
± 20
V
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
E_{AS (Thermally limited)} Single Pulse Avalanche Energy 
E_{AS (Thermally limited)} Single Pulse Avalanche Energy 
I_AR
Avalanche Current 
E_AR
Repetitive Avalanche Energy 
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
R_JA
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient 
557
1102
See Fig 15, 16, 23a, 23b
Typ.
–––
0.24
–––
Max.
0.44
–––
40
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
I_GSS
R_G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
47
1.65
2.10
–––
–––
–––
–––
–––
2.1
Max.
–––
–––
2.00
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V V_GS = 0V, I_D = 250µA
mV/°C Reference to 25°C, I_D = 1mA 
m
V_GS = 10V, I_D = 100A 
V_GS = 6.0V, I_D = 50A 
V V_DS = V_GS, I_D = 250µA
µA
V_DS =60 V, V_GS = 0V
V_DS =60V,V_GS = 0V,T_J =125°C
nA
V_GS = 20V
V_GS = -20V

Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by T_Jmax, starting T_J = 25°C, L = 111µH, R_G = 50, I_AS = 100A, V_GS =10V.
I_SD  100A, di/dt  1338A/µs, V_DD  V_(BR)DSS, T_J 175°C.
Pulse width  400µs; duty cycle  2%.
 C_oss eff. (TR) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
 C_oss eff. (ER) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 to 80% V_DSS.
 R_ is measured at T_J approximately 90°C.
 Limited by T_Jmax, starting T_J = 25°C, L = 1mH, R_G = 50, I_AS = 47A, V_GS =10V.
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November 7, 2014