IRFP3710PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025Ω , ID = 57A )

IRFP3710PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
10
4.5V
20µs PULSE WIDTH
1
T_C = 25°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
T_C = 175°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
T_J = 25°C
100
T_J= 175°C
10
V_DS = 50V
20µs PULSE WIDTH
1
A
4
5
6
7
8
9
10
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0
ID = 46A
2.5
2.0
1.5
1.0
0.5
0.0
V_GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature