IRFP3710PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025Ω , ID = 57A )

IRFP3710PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.12 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 0.025 Ω V_GS = 10V, I_D = 28A „
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
20 ––– ––– S V_DS = 25V, I_D = 28A
––– ––– 25
––– ––– 250
µA ^{VDS = 100V, VGS = 0V}
V_DS = 80V, V_GS = 0V, T_J = 150°C
––– ––– 100 _{n A} V_GS = 20V
––– ––– -100
V_GS = -20V
––– ––– 190
I_D = 28A
––– ––– 26 nC V_DS = 80V
––– ––– 82
V_GS = 10V, See Fig. 6 and 13 „
––– 14 –––
V_DD = 50V
–––
–––
59 –––
58 –––
ns
I_D = 28A
R_G = 2.5Ω
––– 48 –––
R_D = 1.7Ω, See Fig. 10 „
––– 4.5 –––
Between lead,
D
6mm (0.25in.)
nH _{from package}
G
––– 7.5 –––
and center of die contact
S
––– 3000 –––
V_GS = 0V
––– 640 ––– pF V_DS = 25V
––– 330 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 57
MOSFET symbol
A ^{showing the}
D
integral reverse
G
––– ––– 180
p-n junction diode.
S
––– ––– 1.3
––– 210 320
––– 1.7 2.6
V T_J = 25°C, I_S = 28A, V_GS = 0V „
ns T_J = 25°C, I_F = 28A
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 1.4mH
R_G = 25Ω, I_AS = 28A. (See Figure 12)
ƒ I_SD ≤ 28A, di/dt ≤ 460A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.