IRFP264NPBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFP264NPbF
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
20µs PULSE WIDTH
TJ= 175 °C
1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 25°C
T_J = 175° C
10
V _DS= 50V
20µs PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
9.0 10.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.0 _{ID = 42A}
3.0
2.0
1.0
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3