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IRFP264NPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFP264NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
250
âââ
âââ
2.0
29
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ âââ
0.30 âââ
âââ 60
âââ 4.0
âââ âââ
âââ 25
âââ 250
âââ 100
âââ -100
âââ 210
âââ 34
âââ 94
17 âââ
62 âââ
52 âââ
53 âââ
5.0 âââ
13 âââ
3860 âââ
480 âââ
110 âââ
Units
V
V/°C
mâ¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 25A
VDS = 200V
VGS = 10V, See Fig. 6 and 13
VDD = 30V
ID = 25A
RG = 1.8â¦
VGS = 10V, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 44
A showing the
integral reverse
G
âââ âââ 170
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
âââ 270 400 ns TJ = 25°C, IF = 25A
âââ 2.7 4.1 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 1.7mH
RG = 25â¦, IAS = 25A,VGS=10V
2
ISD ⤠25A, di/dt ⤠500A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
Pulse width ⤠400µs; duty cycle ⤠2%.
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