IRFP23N50L Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

IRFP23N50L
100
VGS
TOP
15V
10V
8.0V
10
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 4.5V
0.1
0.01
0.001
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
4.5V
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
TJ = 25°C
TJ = 150°C
1.00
1.0
VDS = 15V
20µs PULSE WIDTH
6.0
11.0
16.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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 3.0
I_D = 23A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
 V _GS = 10V
20 40 60 80 100 120 140 160
T_J, Junction Temperature
( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3