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| IRFP23N50L Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) | |||
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PD - 94230
SMPS MOSFET IRFP23N50L
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
VDSS
l UninterruptIble Power Supply
500V
RDS(on) typ. Trr typ. ID
0.190â¦
170ns 23A
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
Max.
23
15
92
370
2.9
± 30
14
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
10 lbfâ¢in (1.1Nâ¢m)
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
Min. Typ. Max. Units
Conditions
âââ âââ 23
MOSFET symbol
D
A showing the
âââ âââ 92
integral reverse
G
p-n junction diode.
S
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
âââ âââ 1.5 V TJ = 25°C, IS = 14A, VGS = 0V Â
âââ 170 250 ns TJ = 25°C
âââ 220 330
TJ = 125°C
IF = 23A
di/dt = 100A/µs Â
âââ 560 840 nC TJ = 25°C
âââ 980 1500 nC TJ = 125°C
âââ 7.6 11 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
www.irf.com
1
11/28/01
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