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IRFB7746PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed motor drive applications | |||
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IRFB7746PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg â Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
132 âââ âââ S VDS = 10V, ID = 35A
âââ 55 83
ID = 35A
âââ
12
âââ nC VDS = 38V
âââ 16 âââ
VGS = 10V
âââ 39 âââ
âââ 9.9 âââ
VDD = 38V
âââ
âââ
36
33
âââ
âââ
ns
ID = 35A
RG= 2.7ïï
âââ 30 âââ
VGS = 10V ï
âââ 3049 âââ
VGS = 0V
âââ 255 âââ
VDS = 25V
âââ 150 âââ
Æ = 1.0MHz, See Fig. 7
âââ 236 âââ pF VGS = 0V, VDS = 0V to 60Vï
Coss eff.(TR)
Effective Output Capacitance
(Time Related)
âââ 300 âââ
VGS = 0V, VDS = 0V to 60Vï
Diode Characteristics
Symbol
IS
ISM
VSD
dv/dt
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)ï ïï
Diode Forward Voltage
Peak Diode Recovery dv/dtï ï
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
8.0
28
33
30
42
1.8
Max. Units
Conditions
59
219
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V TJ = 25°C,IS = 35A,VGS = 0V ïï
âââ V/ns TJ = 175°C,IS = 35A,VDS = 75Vï
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
VDD = 64V
IF = 35A,
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs ïï ï
âââ A TJ = 25°C ï
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November 7, 2014
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