IRFB7746PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Brushed motor drive applications

IRFB7746PbF
Absolute Maximum Rating
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
59
42
219
99
0.66
± 20
-55 to + 175
300
Units
A
W
W/°C
V
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol
Parameter
E_{AS (Thermally limited)} Single Pulse Avalanche Energy 
E_{AS (Thermally limited)} Single Pulse Avalanche Energy 
I_AR
Avalanche Current 
E_AR
Repetitive Avalanche Energy 
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
R_JA
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient 
Max.
111
154
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
Max.
1.52
–––
62
Units
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
I_GSS
R_G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
0.06
9.0
10.4
–––
–––
–––
–––
–––
1.6
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
––– V/°C Reference to 25°C, I_D = 1mA
10.6
–––
3.7
1.0
150
100
-100
m VGS = 10V, ID = 35A 
 VGS = 6.0V, ID = 18A 
V V_DS = V_GS, I_D = 100µA
µA
V_DS =75 V, V_GS = 0V
V_DS =75V,V_GS = 0V,T_J =125°C
nA
V_GS = 20V
V_GS = -20V
––– 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by T_Jmax, starting T_J = 25°C, L = 170µH, R_G = 50, I_AS = 35A, V_GS =10V.
I_SD  35A, di/dt  432A/µs, V_DD  V_(BR)DSS, T_J 175°C.
Pulse width  400µs; duty cycle  2%.
 C_oss eff. (TR) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
 C_oss eff. (ER) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 to 80% V_DSS.
 R_ is measured at T_J approximately 90°C.
 Limited by T_Jmax, starting T_J = 25°C, L = 1mH, R_G = 50, I_AS = 18A, V_GS =10V.
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November 7, 2014