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IRFB7546PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed Motor drive applications | |||
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IRFB7546PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qgâ Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
150 âââ âââ S VDS = 10V, ID = 45A
âââ 58 87
ID = 45A
âââ
14
âââ nC VDS = 30V
âââ 18 âââ
VGS = 10V
âââ 40 âââ
âââ 11 âââ
VDD = 30V
âââ
âââ
51
32
âââ
âââ
ns
ID = 45A
RG= 2.7ïï
âââ 34 âââ
VGS = 10Vï
âââ 3000 âââ
VGS = 0V
âââ 280 âââ
VDS = 25V
âââ 180 âââ pF Æ = 1.0MHz, See Fig.7
âââ 290 âââ
VGS = 0V, VDS = 0V to 48Vï
Coss eff.(TR) Output Capacitance (Time Related)
âââ 370 âââ
VGS = 0V, VDS = 0V to 48Vï
Diode Characteristics
Symbol
IS
ISM
VSD
dv/dt
trr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)ï ïï
Diode Forward Voltage
Peak Diode Recovery dv/dtïï
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
7.9
29
32
33
40
1.9
Max. Units
Conditions
75
300
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V TJ = 25°C,IS = 45A,VGS = 0V ïï
âââ V/ns TJ = 175°C,IS = 45A,VDS = 60V
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 45A,
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs ïï ï
âââ A TJ = 25°C ï
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November 7, 2014
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