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IRFB7546PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed Motor drive applications
IRFB7546PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
150 ––– ––– S VDS = 10V, ID = 45A
––– 58 87
ID = 45A
–––
14
––– nC VDS = 30V
––– 18 –––
VGS = 10V
––– 40 –––
––– 11 –––
VDD = 30V
–––
–––
51
32
–––
–––
ns
ID = 45A
RG= 2.7
––– 34 –––
VGS = 10V
––– 3000 –––
VGS = 0V
––– 280 –––
VDS = 25V
––– 180 ––– pF ƒ = 1.0MHz, See Fig.7
––– 290 –––
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR) Output Capacitance (Time Related)
––– 370 –––
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
IS
ISM
VSD
dv/dt
trr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
7.9
29
32
33
40
1.9
Max. Units
Conditions
75
300
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V TJ = 25°C,IS = 45A,VGS = 0V 
––– V/ns TJ = 175°C,IS = 45A,VDS = 60V
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 45A,
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
––– A TJ = 25°C 
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November 7, 2014