IRFB7440PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed Motor drive applications

IRFB7440PbF
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
dv/dt
Diode Forward Voltage
f Peak Diode Recovery
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
Min. Typ. Max.
88 ––– –––
––– 90 135
––– 23 –––
––– 32 –––
––– 58 –––
––– 24 –––
––– 68 –––
––– 115 –––
––– 68 –––
––– 4730 –––
––– 680 –––
––– 460 –––
––– 845 –––
––– 980 –––
Units
S
nC
Conditions
V_DS = 10V, I_D = 100A
I_D = 100A
g ^{VDS =20V}
V_GS = 10V
ns V_DD = 20V
I_D = 30A
g ^{RG = 2.7Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 25V
ƒ = 1.0 MHz
i V_GS = 0V, V_DS = 0V to 32V
h V_GS = 0V, V_DS = 0V to 32V
Min. Typ. Max. Units
Conditions
––– ––– 172
A MOSFET symbol
D
showing the
––– ––– 772
––– 0.9 1.3
A integral reverse
G
S
p-n junction diode.
g V T_J = 25°C, I_S = 100A, V_GS = 0V
––– 6.8 ––– V/ns T_J = 175°C, I_S = 100A, V_DS = 40V
––– 24 ––– ns T_J = 25°C V_R = 34V,
––– 28 –––
––– 17 –––
nC
T_J = 125°C
T_J = 25°C
g ^{IF = 100A}
di/dt = 100A/μs
––– 20 –––
––– 1.3 –––
T_J = 125°C
A T_J = 25°C
3
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February 19, 2015