IRFB7440PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Brushed Motor drive applications

IRFB7440PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
T_J
T_STG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
e Single Pulse Avalanche Energy
E_{AS (Thermally limited)}
k Single Pulse Avalanche Energy
I_AR
Ãd Avalanche Current
E_AR
d Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
j Junction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Max.
172™
122™
120
772
143
0.95
± 20
-55 to + 175
300
x x 10lbf in (1.1N m)
161
387
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Δ^V(BR)DSS^/Δ^TJ
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min. Typ. Max.
40 ––– –––
––– 0.035 –––
––– 2.0 2.5
––– 3.0 –––
2.2 3.0 3.9
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 2.6 –––
Units
V
V/°C
m_Ω
m_Ω
V
μA
nA
Ω
Conditions
V_GS = 0V, I_D = 250μA
d Reference to 25°C, I_D = 5.0mA
g V_GS = 10V, I_D = 100A
g V_GS = 6.0V, I_D = 50A
V_DS = V_GS, I_D = 100μA
V_DS = 40V, V_GS = 0V
V_DS = 40V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.032mH
R_G = 50Ω, I_AS = 100A, V_GS =10V.
„ I_SD ≤ 100A, di/dt ≤ 1330A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
‰ Limited by T_Jmax, starting T_J = 25°C, L = 1mH, R_G = 50Ω, I_AS = 28A,
V_GS =10V.
* Halogen -Free since April 30, 2014
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February 19, 2015