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| IRFB7437PBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFETPower MOSFET | |||
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IRFB7437PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
160
Qg
Total Gate Charge
âââ
Qgs
Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) i âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)h
âââ
Typ.
âââ
150
41
51
99
19
70
78
53
7330
1095
745
1310
1735
Max. Units
Conditions
âââ S VDS = 10V, ID = 100A
225 nC ID = 100A
âââ
VDS =20V
âââ
VGS = 10V g
âââ
ID = 100A, VDS =20V, VGS = 10V
âââ ns VDD = 20V
âââ
ID = 30A
âââ
RG = 2.7ï
âââ
VGS = 10V g
âââ pF VGS = 0V
âââ
VDS = 25V
âââ
Æ = 1.0 MHz, See Fig. 5
âââ
VGS = 0V, VDS = 0V to 32V i, See Fig. 11
âââ
VGS = 0V, VDS = 0V to 32V h
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) d
VSD
Diode Forward Voltage
dv/dt
Peak Diode Recovery f
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min. Typ. Max. Units
Conditions
âââ âââ 250c A MOSFET symbol
D
showing the
âââ âââ 1000 A integral reverse
G
p-n junction diode.
S
âââ 1.0 1.3 V TJ = 25°C, IS = 100A, VGS = 0V g
âââ 3.1 âââ V/ns TJ = 175°C, IS = 100A, VDS = 40V g
âââ 30 âââ ns TJ = 25°C
VR = 34V,
âââ 30 âââ
TJ = 125°C
IF = 100A
âââ 24 âââ nC TJ = 25°C
di/dt = 100A/μs g
âââ 25 âââ
TJ = 125°C
âââ 1.3 âââ A TJ = 25°C
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