IRFB7437PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFETPower MOSFET

IRFB7437PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery f
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
E_AS (tested)
Single Pulse Avalanche Energy Tested Value k
I_AR
Avalanche Current d
E_AR
Repetitive Avalanche Energy d
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
R_JA
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient j
Max.
250c
180
195
1000
230
1.5
± 20
3.0
-55 to + 175
300
10lbfxin (1.1Nxm)
350
500
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min. Typ. Max. Units
Conditions
40 ––– ––– V V_GS = 0V, I_D = 250μA
––– 0.029 ––– V/°C Reference to 25°C, I_D = 1mAd
––– 1.5 2.0 m V_GS = 10V, I_D = 100A
––– 1.8 –––
V_GS = 6.0V, I_D = 50A
2.2 3.0 3.9 V V_DS = V_GS, I_D = 150μA
––– ––– 1.0 μA V_DS = 40V, V_GS = 0V
––– ––– 150
V_DS = 40V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 2.2 ––– 
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width  400μs; duty cycle  2%.
temperature. Bond wire current limit is 195A. Note that current
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as C_oss while V_DS is rising from 0 to 80% V_DSS.
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.069mH
R_G = 25, I_AS = 100A, V_GS =10V.
„ I_SD  100A, di/dt  1166A/μs, V_DD V_(BR)DSS, T_J  175°C.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_ is measured at T_J approximately 90°C.
‰ This value determined from sample failure population,
starting T_J = 25°C, L=0.095mH, R_G = 25, I_AS = 100A, V_GS =10V
2
www.irf.com