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IRFB7434PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed Motor drive applications | |||
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IRFB7434PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
VSD
dv/dt
Pulsed Source Current
Ãd (Body Diode)
Ãfà Diode Forward Voltage
Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
211
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
216
51
77
139
24
68
115
68
10820
1540
1140
1880
2208
Max.
âââ
324
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
Conditions
S VDS = 10V, ID = 100A
ID = 100A
g nC VDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
ns ID = 30A
g RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF
Æ = 1.0 MHz, See Fig. 5
i VGS = 0V, VDS = 0V to 32V
h VGS = 0V, VDS = 0V to 32V
, See Fig. 12
Min. Typ. Max. Units
Conditions
 âââ âââ 317
MOSFET symbol
D
A showing the
integral reverse
G
âââ âââ 1270
âââ 0.9 1.3
g p-n junction diode.
V TJ = 25°C, IS = 100A, VGS = 0V
S
âââ 5.0 âââ V/ns TJ = 175°C, IS = 100A, VDS = 40V
âââ
38
âââ
ns TJ = 25°C
VR = 34V,
âââ
âââ
37
50
âââ
âââ
TJ = 125°C
nC TJ = 25°C
g IF = 100A
di/dt = 100A/μs
âââ 50 âââ
TJ = 125°C
âââ 1.9 âââ A TJ = 25°C
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November 18, 2014
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