IRFB7434PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Brushed Motor drive applications

IRFB7434PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
Ãfà Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
E_{AS (Thermally limited)}
I_AR
E_AR
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
e Single Pulse Avalanche Energy
k Single Pulse Avalanche Energy
Ãd Avalanche Current
d Repetitive Avalanche Energy
Parameter
j Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Max.
317™
224™
195
1270
294
1.96
± 20
5.0
-55 to + 175
300
x x 10lbf in (1.1N m)
490
1098
See Fig. 14, 15 , 22a, 22b
Typ.
–––
0.50
–––
Max.
0.51
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.032
1.25
1.8
3.0
–––
–––
–––
–––
2.1
Max.
–––
–––
1.6
–––
3.9
1.0
150
100
-100
–––
Units
Conditions
V
V/°C
mΩ
mΩ
V
μA
nA
Ω
V_GS = 0V, I_D = 250μA
d Reference to 25°C, I_D = 5mA
g V_GS = 10V, I_D = 100A
g V_GS = 6.0V, I_D = 50A
V_DS = V_GS, I_D = 250μA
V_DS = 40V, V_GS = 0V
V_DS = 40V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width ≤ 400μs; duty cycle ≤ 2%.
temperature. Bond wire current limit is 195A. Note that current
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as C_oss while V_DS is rising from 0 to 80% V_DSS.
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.099mH
R_G = 50Ω, I_AS = 100A, V_GS =10V.
„ I_SD ≤ 100A, di/dt ≤ 1307A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
‰ Limited by T_Jmax starting T_J = 25°C, L= 1mH, R_G = 50Ω, I_AS = 47A, V_GS =10V.
* Halogen -Free since April 30, 2014
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November 18, 2014