IRFB41N15D Datasheet, PDF (3/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
IRFB/IRFS/IRFSL41N15D
1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
6.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
6.0V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 175° C
T_J = 25° C
10
V _DS= 25V
20µs PULSE WIDTH
1
6
7
8
9
10
11
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ID = 41A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3