IRFB41N15D Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

IRFB/IRFS/IRFSL41N15D
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
I_GSS
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
––– ––– V
0.17 ––– V/°C
––– 0.045 Ω
––– 5.5 V
––– 25 _µA
––– 250
––– 100
nA
––– -100
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 25A „
V_DS = V_GS, I_D = 250µA
V_DS = 150V, V_GS = 0V
V_DS = 120V, V_GS = 0V, T_J = 150°C
V_GS = 30V
V_GS = -30V
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Forward Transconductance
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
C_oss
Output Capacitance
C_oss eff. Effective Output Capacitance
Avalanche Characteristics
18 ––– ––– S V_DS = 50V, I_D = 25A
––– 72 110
I_D = 25A
––– 21 31 nC V_DS = 120V
––– 35 52
V_GS = 10V, „
––– 16 –––
V_DD = 75V
––– 63 ––– _ns I_D = 25A
––– 25 –––
R_G = 2.5Ω
––– 14 –––
V_GS = 10V „
––– 2520 –––
V_GS = 0V
––– 510 –––
V_DS = 25V
––– 110 ––– pF ƒ = 1.0MHz†
––– 3090 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
––– 230 –––
V_GS = 0V, V_DS = 120V, ƒ = 1.0MHz
––– 250 –––
V_GS = 0V, V_DS = 0V to 120V …
Parameter
Typ.
Max.
Units
E_AS
Single Pulse Avalanche Energy‚
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
Thermal Resistance
–––
470
mJ
–––
25
A
–––
20
mJ
Parameter
Typ.
Max.
Units
R_θJC
Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface †
R_θJA
Junction-to-Ambient†
R_θJA
Junction-to-Ambient‡
Diode Characteristics
–––
0.75
0.50
–––
°C/W
–––
62
–––
40
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
MOSFET symbol
D
––– ––– 41
A ^{showing the}
––– ––– ¹⁶⁴
integral reverse
G
p-n junction diode.
S
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
2
––– ––– 1.3 V T_J = 25°C, I_S = 25A, V_GS = 0V „
––– 170 260 ns T_J = 25°C, I_F = 25A
––– 1.3 1.9 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
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