IRF7904UPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

Typical Characteristics
IRF7904UPbF
Q1 - Control FET
100
VGS
TOP
10V
8.0V
5.0V
4.5V
4.0V
10
3.5V
3.0V
BOTTOM 2.5V
1
Q2 - Synchronous FET
100
VGS
10
TOP
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1
2.5V
BOTTOM 2.5V
0.1
0.1
2.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
10
1
0.1
2.5V
≤ 60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
100.0
0.1
0.1
≤ 60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
VGS
TOP
10V
10
8.0V
5.0V
2.5V
4.5V
4.0V
3.5V
3.0V
BOTTOM 2.5V
1
0.1
≤ 60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100.0
10.0
TJ = 150°C
1.0
TJ = 25°C
0.1
1.0
VDS = 15V
≤ 60µs PULSE WIDTH
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
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10.0
TJ = 150°C
1.0
TJ = 25°C
0.1
1.0
VDS = 15V
≤ 60µs PULSE WIDTH
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
3