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| IRF7904UPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7904UPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
âÎVDSS/âTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
âVGS(th)/âTJ
IDSS
IGSS
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
 Avalanche Current
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Q1&Q2
Q1
Q2
Q1
Q2
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
âââ
âââ
âââ
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
âââ
17
23
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.024
0.024
11.4
14.5
8.6
10
âââ
-5.0
-5.0
âââ
âââ
âââ
âââ
âââ
âââ
7.5
14
2.2
3.7
0.6
1.1
2.5
4.8
2.2
4.4
3.1
5.9
4.5
9.1
3.2
2.9
6.9
7.8
7.3
10
10
15
3.2
4.6
910
1780
190
390
94
180
Max.
âââ
âââ
âââ
16.2
20.5
10.8
13
2.25
âââ
âââ
1.0
150
100
-100
âââ
âââ
11
21
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
4.8
4.4
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mâ¦
e VGS = 10V, ID = 7.6A
e VGS = 4.5V, ID = 6.1A
e VGS = 10V, ID = 11A
e VGS = 4.5V, ID = 8.8A
V Q1: VDS = VGS, ID = 25µA
mV/°C Q2: VDS = VGS, ID = 50µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 6.1A
VDS = 15V, ID = 8.8A
Q1
VDS = 15V
nC VGS = 4.5V, ID = 6.1A
Q2
VDS = 15V
VGS = 4.5V, ID = 8.8A
nC VDS = 16V, VGS = 0V
â¦
Q1
VDD = 15V, VGS = 4.5V
ID = 6.1A
ns
Q2
VDD = 15V, VGS = 4.5V
ID = 8.8A
Clamped Inductive Load
VGS = 0V
pF VDS = 15V
Æ = 1.0MHz
Typ.
âââ
âââ
Q1 Max.
140
6.1
Q2 Max.
250
8.8
Units
mJ
A
Min. Typ. Max. Units
Conditions
Q1
âââ âââ 1.8
A MOSFET symbol
Q2
âââ âââ 2.5
showing the
Q1
âââ âââ 61
A integral reverse
Q2
Q1
Q2
âââ âââ 88
âââ âââ 1.0
âââ âââ 1.0
V
p-n junction diode.
e TJ = 25°C, IS = 6.1A, VGS = 0V
e TJ = 25°C, IS = 8.8A, VGS = 0V
Q1
Q2
âââ 11
âââ 16
17
24
e ns Q1 TJ = 25°C, IF = 6.1A,
VDD = 15V, di/dt = 100A/µs
Q1
Q2
âââ 2.6 3.9
âââ 6.9 10
e nC Q2 TJ = 25°C, IF = 8.8A,
VDD = 15V, di/dt = 100A/µs
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