English
Language : 

IRF7807VPBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET® Power MOSFET
IRF7807VPbF
Power MOSFET Selection for DC/DC
Converters
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
Power losses in the control switch Q1 are given
by;
Ploss = P + conduction P + switching Pdrive+ Poutput
This can be expanded and approximated by;
( ) Ploss =
I2
rms
×
Rds(on )
⎛
+⎜I
⎝
×
Qgd
ig
× Vin
×
f ⎞⎟
⎠
⎛
+⎜I
⎝
×
Qgs 2
ig
× Vin
×
f ⎞⎟
⎠
( ) + Qg × Vg × f
+
⎛
⎝
Qoss
2
× Vin
×
f
⎞
⎠
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to Idmax (t2) at which time the drain volt-
age begins to change. Minimizing Qgs2 is a critical fac-
tor in reducing switching losses in Q1.
Qoss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure 2 shows how Qoss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitance’s Cds and Cdg when multiplied by
the power supply input buss voltage.
www.irf.com
t1
VGTH
t0
4
Drain Current
t2 t3
1
Gate Voltage
2
Drain Voltage
Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
Ploss
=
Pconduction
+
Pdrive
+
P*
output
( ) Ploss = Irms 2 × Rds(on)
( ) + Qg × Vg × f
( ) + ⎛⎜ Qoss
⎝2
× Vin
×
f⎞
⎠
+
Qrr × Vin × f
*dissipated primarily in Q1.
3