IRF7807VPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRF7807VPbF
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current*
Total Gate Charge*
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Switch Charge (Q_gs2 + Q_gd)
Output Charge*
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
BV_DSS
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Q_G
Q_GS1
Q_GS2
Q_GD
Q_SW
Q_OSS
R_G
t_d(on)
t_r
t_d(off)
t_f
Min
30
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
–––
–––
–––
–––
Typ Max Units
Conditions
d ^{––– ––– V VGS = 0V, ID = 250µA}
17 25 mΩ V_GS = 4.5V, I_D = 7.0A
––– 3.0 V V_DS = V_GS, I_D = 250µA
––– 100
V_DS = 30V, V_GS = 0
––– 20 µA V_DS = 24V, V_GS = 0
––– 100
V_DS = 24V, V_GS = 0, T_J = 100°C
––– ±100 nA V_GS = ± 20V
9.5 14
V_GS = 5V, I_D = 7.0A
2.3 –––
V_DS = 16V
1.0 –––
nC
2.4 –––
3.4 5.2
12 16.8
––– 2.8
V_DS = 16V, V_GS = 0
Ω
6.3 –––
1.2 –––
11 –––
2.2 –––
V_DD = 16V
ns ^{ID = 7A}
V_GS = 5V, R_G = 2Ω
Resistive Load
Source-Drain Ratings and Characteristics
Parameter
Diode Forward Voltage*
Symbol Min Typ Max Units
Conditions
V_SD
––– ––– 1.2
d _V I_S = 7.0A ,V_GS = 0V
f Reverse Recovery Charge
f ^{Reverse Recovery Charge}
(with Parallel Schottsky)
Q_rr
Q_rr(s)
––– 64 –––
di/dt = 700A/µs
nC ^{VDS = 16V, VGS = 0V, IS = 7.0A}
––– 41 –––
di/dt = 700A/µs , (with 10BQ040)
V_DS = 16V, V_GS = 0V, I_S = 7.0A
Notes: _
‚
ƒ
„
…
†
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q_oss
Typical values of R_DS(on) measured at V_GS = 4.5V, Q_G, Q_SW and Q_OSS
measured at V_GS = 5.0V, I_F = 7.0A.
R_θ is measured at T_J approximately 90°C
* Device are 100% tested to these parameters.
2
www.irf.com