IRF7754TRPBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRF7754PbF
100
VGS
TOP
-7.0V
-5.0V
-4.5V
10
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
1
0.1
0.01
0.1
-1.0V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
10
-1.5V
-1.2V
BOTTOM -1.0V
1
-1.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 150^° C
10
T_J = 25^°C
1
0.1
1.0
V _DS= -10V
20µs PULSE WIDTH
1.2
1.4
1.6
1.8
2.0
-V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -5.5A}
1.5
1.0
0.5
V_GS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (^° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3