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IRF7754TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRF7754PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-12 âââ âââ
âââ 0.008 âââ
âââ âââ 25
ÂÂÂ âââ 34
ÂÂÂ âââ 49
-0.4 âââ -0.9
16 âââ âââ
âââ âââ -1.0
âââ âââ -25
âââ âââ -100
âââ âââ 100
âââ 22 âââ
âââ 3.9 âââ
âââ 4.8 âââ
âââ 9.8 14.7
âââ 18 27
âââ 267 401
âââ 191 287
âââ 1984 âââ
âââ 618 âââ
âââ 385 âââ
V
V/°C
mâ¦
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -5.4A Â
VGS = -2.5V, ID = -4.6A Â
VGS = -1.8V, ID = -3.9A Â
VDS = VGS, ID = -250µA
VDS = -10V, ID = -5.4A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS = 8V
ID = -5.4A
VDS = -6V
VGS = -4.5V Â
VDD = -6V, VGS = -4.5V
ID = -1.0A
RD = 6â¦
RG = 6⦠Â
VGS = 0V
VDS = -6V
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ -1.0
showing the
A integral reverse
G
ÂÂÂ ÂÂÂ -22
p-n junction diode.
S
âââ âââ -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V Â
âââ 39 59
âââ 27 41
ns TJ = 25°C, IF = -1.0A
nC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t < 10 sec.
2
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