IRF7704PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
1
0.1
0.01
0.1
-2.70V
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF7704PbF
100
10
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
1
-2.70V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100.0
10.0 _{TJ = 150°C}
1.0
TJ = 25°C
0.1
0.0
2.5
VDS = -25V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = 4.6A}
1.5
1.0
0.5
V_GS= -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3