IRF7704PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7704PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
I_DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
7.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.03 –––
––– 46
––– 74
––– -3.0
––– –––
––– -10
––– -25
––– -100
––– 100
25 38
10 15
9.5 14
25 –––
360 –––
190 –––
100 –––
3150 –––
250 –––
200 –––
Units
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -10V, I_D = -4.6A ‚
V_GS = -4.5V, I_D = -3.7A ‚
V_DS = V_GS, I_D = -250µA
V_DS = -10V, I_D = -4.6A
V_DS = -32V, V_GS = 0V
V_DS = -32V, V_GS = 0V, T_J = 70°C
V_GS = -20V
V_GS = 20V
I_D = -4.6A
V_DS = -15V
V_GS = -4.5V
V_DD = -20V ‚
I_D = -1.0A
R_G = 6.0Ω
V_GS = -4.5V
V_GS = 0V
V_DS = -25V
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -1.5
showing the
A
integral reverse
G
––– ––– -19
p-n junction diode.
S
––– ––– -1.2 V T_J = 25°C, I_S = -1.5A, V_GS = 0V ‚
––– 29 44 ns T_J = 25°C, I_F = -1.5A
––– 41 62 nC di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
2
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