IRF7700GPBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

100
VGS
TOP -15V
-10V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
BOTTOM -2.0V
10
-2.0V
IRF7700GPbF
100
VGS
TOP -15V
-10V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
BOTTOM -2.0V
10
-2.0V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ= 150 °C
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
2.0
VDS = -15V
20µs PULSE WIDTH
2.4
2.8
3.2
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -8.6A}
1.5
1.0
0.5
V_GS= -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3