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IRF7700GPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance | |||
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IRF7700GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 âââ âââ V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.011 âââ
âââ âââ 0.015
ÂÂÂ âââ 0.024
V/°C
â¦
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -8.6A Â
VGS = -2.5V, ID = -7.3A Â
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-0.45 âââ -1.2
-20 âââ âââ
V VDS = VGS, ID = -250µA
S VDS = -10V, ID = -8.6A
IDSS
Drain-to-Source Leakage Current
âââ âââ -1.0
âââ âââ -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -12V
âââ âââ 100
VGS = 12V
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 59 89
âââ 10 15
âââ 19 29
âââ 19 âââ
ID = -8.6A
nC VDS = -16V
VGS = -5.0VÂ
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 40 âââ ns ID = -1.0A
âââ 120 âââ
RG = 6.0â¦
âââ 130 âââ
VGS = -4.5VÂ
Ciss
Input Capacitance
âââ 4300 âââ
VGS = 0V
Coss
Output Capacitance
âââ 880 âââ pF VDS = -15V
Crss
Reverse Transfer Capacitance
âââ 580 âââ
Æ = TBDkHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
ÂÂÂ
ÂÂÂ
âââ
âââ
âââ
Typ.
ÂÂÂ
ÂÂÂ
âââ
130
180
Max.
-1.5
-68
-1.2
200
270
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.5A, VGS = 0V Â
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t<10 sec
2
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