IRF7480MTRPBF Datasheet, PDF (3/12 Pages) International Rectifier – Synchronous rectifier applications

IRF7480MTRPbF
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
C_oss eff. (ER) Effective Output Capacitance (Energy Related)
C_oss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
dv/dt
Peak Diode Recovery 
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
Min.
370
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
123
31
44
79
21
70
68
58
6680
1035
700
1240
1515
Typ.
–––
–––
–––
2.4
44
46
56
63
2.1
Max. Units
Conditions
––– S V_DS = 10V, I_D = 132A
185
I_D = 132A
–––
–––
nC
V_DS =20V
V_GS = 10V 
–––
I_D = 132A, V_DS =0V, V_GS = 10V
–––
V_DD = 20V
–––
–––
ns
I_D = 30A
R_G = 2.7
–––
V_GS = 10V 
–––
V_GS = 0V
–––
V_DS = 25V
––– _pF ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 0V to 32V 
–––
V_GS = 0V, V_DS = 0V to 32V 
Max. Units
Conditions
87
868
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V T_J= 25°C,I_S =132A, V_GS = 0V
–––
V/ns
T_J =150°C,I_S =132A,
V_DS = 40V
–––
–––
ns
T_J = 25° C V_R = 34V,
T_J = 125°C I_F = 132A
–––
–––
nC
T_J = 25°C di/dt = 100A/µs 
T_J = 125°C
––– A T_J = 25°C
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by T_Jmax, starting T_J = 25°C, L = 0.009mH, R_G = 50, I_AS = 132A, V_GS =10V.
 I_SD ≤ 132A, di/dt ≤ 920A/µs, V_DD ≤ V(_BR)DSS, T_J ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C_oss eff. (TR) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff. (ER) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 to 80% V_DSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf
 R_ is measured at T_J approximately 90°C.
 Limited by T_Jmax, starting T_J = 25°C, L = 1mH, R_G = 50, I_AS = 20A, V_GS =10V.
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May 14, 2015