IRF7342D2PBF Datasheet, PDF (3/11 Pages) International Rectifier – FETKY MOSFET & Schottky Diode

100
VGS
TOP
-15V
-10V
-6.0V
-5.0V
-4.5V
10
-3.5V
-3.0V
BOTTOM -2.5V
IRF7342D2PbF
Power Mosfet Characteristics
100
VGS
TOP
-15V
-10V
- 6.0V
-5.5V
-4.5V
10
-3.5V
-3.0V
BOTTOM - 2.5V
1
0.1
0.1
-2.5V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
0.1
0.1
-2.5V
20µs PULSE WIDTH
Tj = 150°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
10
T_J = 150^° C
1
0.1
2.0
VDS= -25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -3.4 A}
1.5
1.0
0.5
V_GS = -1^-0V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3