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IRF7342D2PBF Datasheet, PDF (2/11 Pages) International Rectifier – FETKY MOSFET & Schottky Diode | |||
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IRF7342D2PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-55 âââ âââ
âââ -0.054 âââ
âââ 95 105
âââ 150 170
-1.0 âââ âââ
3.3 âââ âââ
âââ âââ -2.0
âââ âââ -25
âââ âââ -100
âââ âââ 100
âââ 26 38
âââ 3.0 4.5
âââ 8.4 13
âââ 14 22
âââ 10 15
âââ 43 64
âââ 22 32
âââ 690 âââ
âââ 210 âââ
âââ 86 âââ
V
V/°C
mâ¦
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.4A Â
VGS = -4.5V, ID = -2.7A Â
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.1A
VDS = -44V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -3.1A
VDS = -44V
VGS = -10V, See Fig. 6 & 14 Â
VDD = -28V
ID = -1.0A
RG = 6.0â¦
VGS = -10V, Â
VGS = 0V
VDS = -25V
Æ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
Continuous Source Current(Body Diode) âââ âââ -2.0
Pulsed Source Current (Body Diode) âââ âââ -27 A
VSD
Body Diode Forward Voltage
âââ âââ -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
trr
Reverse Recovery Time (Body Diode) âââ 54 80
Qrr
Reverse Recovery Charge
âââ 85 130
Schottky Diode Maximum Ratings
ns TJ = 25°C, IF = -2.0A
nC di/dt = 100A/µs Â
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.0 A
490 A
70
Conditions
50% Duty Cycle. Rectangular Wave, TA = 57°C
See Fig. 21
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Vrrm
Irm
Ct
Parameter
Max. Forward Voltage Drop
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Max. Junction Capacitance
Max. Units
0.61
0.76
0.53 V
0.65
60 V
2.0 mA
30
145 pF
Conditions
If = 3.0A, Tj = 25°C
If = 6.0A, Tj = 25°C
If = 3.0A, Tj = 125°C
If = 6.0A, Tj = 125°C
Vr = 60V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
2
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