IRF7307QPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
N-Channel
IRF7307QPbF
1000
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
1.5V ^{20µs PULSE WIDTH}
1
T_J = 25°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
10
V_DS = 15V
20µs PULSE WIDTH
1
A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1200
900
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
Ciss
600
Coss
300
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
10
1.5V
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0 _{ID = 4.3A}
1.5
1.0
0.5
0.0
V_GS = 4.5V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
10
I_D = 2.6A
V_DS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 11
0
A
0
5
10
15
20
25
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
3