IRF7307QPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7307QPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
LS
C_iss
C_oss
C_rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 — —
P-Ch -20 — —
V
N-Ch
P-Ch
— 0.044 —
— -0.012 —
V/°C
N-Ch
—
—
P-Ch
—
—
— 0.050
— 0.070
— 0.090
Ω
— 0.140
N-Ch 0.70 — —
P-Ch -0.70 — —
V
N-Ch 8.30 — —
P-Ch 4.00 — —
S
N-Ch — — 1.0
P-Ch —
N-Ch —
—
—
-1.0
25
µA
P-Ch — — -25
N-P –– — ±100
N-Ch — — 20
P-Ch — — 22
N-Ch —
P-Ch —
—
—
2.2
3.3
nC
N-Ch — — 8.0
P-Ch — — 9.0
N-Ch — 9.0 —
P-Ch — 8.4 —
N-Ch — 42 —
P-Ch —
N-Ch —
26
32
—
—
ns
P-Ch — 51 —
N-Ch — 51 —
P-Ch — 33 —
N-P —
N-P —
4.0
6.0
—
—
nH
N-Ch — 660 —
P-Ch — 610 —
N-Ch — 280 —
P-Ch — 310 —
pF
N-Ch — 140 —
P-Ch — 170 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, I_D = 1mA
Reference to 25°C, ID = -1mA
V_GS = 4.5V, I_D = 2.6A ƒ
VGS = 2.7V, ID = 2.2A ƒ
VGS = -4.5V, ID = -2.2A ƒ
VGS = -2.7V, ID = -1.8A ƒ
VDS = VGS, ID = 250µA
V_DS = V_GS, I_D = -250µA
VDS = 15V, ID = 2.6A ƒ
V_DS = -15V, I_D = -2.2A ƒ
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V,
V_DS = 16V, V_GS = 0V, T_J = 125°C
VDS = -16V, VGS = 0V, TJ = 125°C
V_GS = ± 12V
N-Channel
I_D = 2.6A, V_DS = 16V, V_GS = 4.5V
ƒ
P-Channel
I_D = -2.2A, V_DS = -16V, V_GS = -4.5V
N-Channel
V_DD = 10V, I_D = 2.6A, R_G = 6.0Ω,
R_D = 3.8Ω
ƒ
P-Channel
V_DD = -10V, I_D = -2.2A, R_G = 6.0Ω,
R_D = 4.5Ω
Between lead tip
and center of die contact
N-Channel
V_GS = 0V, V_DS = 15V, ƒ = 1.0MHz
ƒ
P-Channel
V_GS = 0V, V_DS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current (Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Min. Typ. Max. Units
Conditions
N-Ch — — 2.5
P-Ch — — -2.5 _A
N-Ch — — 21
P-Ch — — -17
N-Ch —
P-Ch —
— 1.0 _V
— -1.0
T_J = 25°C, I_S = 1.8A, V_GS = 0V ƒ
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
N-Ch — 29 44 _{ns N-Channel}
P-Ch — 56 84
T_J = 25°C, I_F = 2.6A, di/dt = 100A/µs
N-Ch —
P-Ch —
22
71
33
110
nC
P-Channel
T_J = 25°C, I_F = -2.2A, di/dt = 100A/µs
ƒ
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by L_S+L_D)
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel I_SD ≤ 2.6A, di/dt ≤ 100A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
P-Channel I_SD ≤ -2.2A, di/dt ≤ 50A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
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„ Surface mounted on FR-4 board, t ≤ 10sec.
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