IRF7303PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050Ω )

IRF7303PbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
2.0
ID = 4.0A
1.5
1.0
V_DS = 15V
20µs PULSE WIDTH
10
A
4
5
6
7
8
9
10
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
0.0
-60
V_GS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature