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IRF7303PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050Ω ) | |||
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IRF7303PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30   V VGS = 0V, ID = 250µA
ÂÂÂ 0.032 ÂÂÂ
ÂÂÂ ÂÂÂ 0.050
ÂÂÂ ÂÂÂ 0.080
V/°C
â¦
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.4A Â
VGS = 4.5V, ID = 2.0A Â
1.0   V VDS = VGS, ID = 250µA
5.2 ÂÂÂ ÂÂÂ S VDS = 15V, ID = 2.4A
  1.0 µA VDS = 24V, VGS = 0V
ÂÂÂ ÂÂÂ 25
VDS = 24V, VGS = 0V, TJ = 125 °C
ÂÂÂ ÂÂÂ 100 nA
ÂÂÂ ÂÂÂ -100
ÂÂÂ ÂÂÂ 25
VGS = 20V
VGS = - 20V
ID = 2.4A
ÂÂÂ ÂÂÂ 2.9 nC VDS = 24V
ÂÂÂ ÂÂÂ 7.9
VGS = 10V, See Fig. 6 and 12 Â
ÂÂÂ 6.8 ÂÂÂ
VDD = 15V
ÂÂÂ 21 ÂÂÂ ns ID = 2.4A
ÂÂÂ 22 ÂÂÂ
RG = 6.0â¦
ÂÂÂ 7.7 ÂÂÂ
RD = 6.2â¦, See Fig. 10 Â
D
ÂÂÂ 4.0 ÂÂÂ
nH Between lead tip
and center of die contact G
ÂÂÂ 6.0 ÂÂÂ
S
ÂÂÂ 520 ÂÂÂ
VGS = 0V
ÂÂÂ 180 ÂÂÂ pF VDS = 25V
ÂÂÂ 72 ÂÂÂ
 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ 2.5
showing the
A integral reverse
G
ÂÂÂ ÂÂÂ 20
p-n junction diode.
S
ÂÂÂ ÂÂÂ 1.0
ÂÂÂ 47 71
ÂÂÂ 56 84
V TJ = 25°C, IS = 1.8A, VGS = 0V Â
ns TJ = 25°C, IF = 2.4A
nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 ISD ⤠2.4A, di/dt ⤠73A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
 Surface mounted on FR-4 board, t ⤠10sec.
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