T0247 Datasheet, PDF (24/35 Pages) International Rectifier – Fit Rate / Equivalent Device Hours

HIGH TEMPERATURE REVERSE BIAS (HTRB)
Conditions
Bias:
Temperature:
Duration:
Test points:
Vce = As required
Tmax
2000 Hours nominal
168, 500, 1000,
1500, 2000, Hours nominal
Test circuit
DUT
D
DC
BIAS
Purpose
D = Diode for CoPack devices only
High temperature reverse bias (HTRB) burn-in is to stress the devices with the
applied voltage in the blocking mode while elevating the junction temperature. This
will accelerate any blocking voltage degradation process.
Failure Modes
The primary failure mode for HTRB stress is a gradual degradation of the breakdown
characteristics or V_(BR)CES. This degradation has been attributed to the presence of
foreign materials and polar/ionic contaminants. These materials, migrating under
application of electric field at high temperature, can perturb the electric field
termination structure.
Extreme care must be exercised in the course of a long term test to avoid potential
hazards such as electrostatic discharge or electrical overstress to the gate during
test. Failures arising from this abuse can be virtually indistinguishable from true
HTRB failures which results from the actual stress test.
Sensitive Parameters
V_(BR)CES, I_CES, I_GES, V_GE(th)
IGBT / CoPack
Quarterly Reliability Report
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