JANTX2N6804 Datasheet, PDF (2/6 Pages) International Rectifier – POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)

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JANTX2N6804, JANTXV2N6804 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 — — V
— -0.087 — V/°C
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
— — 0.30
— — 0.35 Ω
-2.0 — -4.0 V
3
— — S( )
VGS = -10V, ID = -7A 
VGS = -10V, ID = -11A
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -7A 
—
—
— -25
— -250
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
— -100 _nA
— — 100
VGS = -20V
VGS = 20V
1.5 — 29
1.0 — 7.1 nC
VGS = -10V, ID = -11A
VDS = Max. Rating x 0.5
2.0 — 21
see figures 6 and 13
— — 60
—
—
— 140
— 140
ns
VDD = -50V, ID = -11A,
RG = 7.5Ω, VGS = -10V
— — 140
see figure 10
— 5.0 —
Measured from the _{Modified MOSFET}
drain lead, 6mm (0.25 _{symbol showing the}
in.) from package to internal inductances.
—
13 —
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
— 860 —
— 350 — pF
— 125 —
VGS = 0V, VDS = -25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
—
—
-11
A ^{Modified MOSFET symbol showing the}
— — -50
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
— — -4.7 V
Tj = 25°C, IS = -11A, VGS = 0V 
— — 250 ns Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs
— — 3.0 µC
VDD ≤ -50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 1.67
— — 30 K/W
Test Conditions
Typical socket mount
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