JANTX2N6804 Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)

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Provisional Data Sheet No. PD-9.549B
JANTX2N6804
HEXFET^® POWER MOSFET
JANTXV2N6804
[REF:MIL-PRF-19500/562]
[GENERIC:IRF9130]
P-CHANNEL
-100 Volt, 0.30Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6804
JANTXV2N6804
-100V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
0.30Ω
ID
-11A
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current Œ
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
JANTX2N6804, JANTXV2N6804 Units
-11
-7
A
-50
75
W
0.60
W/K 
±20
V
81
mJ
-11
A
7.5
mJ
-5.5
-55 to 150
V/ns
o_C
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
g