IRLS3034TRLPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET

Power MOSFET

IRLS/SL3034PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40
–––
–––
–––
–––
0.04
1.4
1.6
–––
–––
1.7
2.0
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 5mA
gg _mΩ
V_GS = 10V, I_D = 195A
V_GS = 4.5V, I_D = 172A
1.0 ––– 2.5 V V_DS = V_GS, I_D = 250µA
–––
–––
–––
–––
20
250
µA
V_DS = 40V, V_GS = 0V
V_DS = 40V, V_GS = 0V, T_J = 125°C
–––
–––
––– 100
––– -100
nA
V_GS = 20V
V_GS = -20V
R_G(int)
Internal Gate Resistance
––– 2.1 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
286 ––– –––
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
––– 108 162
––– 29 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 54 –––
Q_sync
t_d(on)
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
––– 54 –––
––– 65 –––
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 827 –––
––– 97 –––
t_f
Fall Time
––– 355 –––
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 10315 –––
––– 1980 –––
C_rss
Reverse Transfer Capacitance
––– 935 –––
ià ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 2378 –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 2986 –––
S V_DS = 10V, I_D = 195A
I_D = 185A
g nC VDS = 20V
V_GS = 4.5V
I_D = 185A, V_DS =0V, V_GS = 4.5V
V_DD = 26V
ns
I_D = 195A
g ^{RG = 2.1Ω}
V_GS = 4.5V
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
i V_GS = 0V, V_DS = 0V to 32V
h V_GS = 0V, V_DS = 0V to 32V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– –––
343
MOSFET symbol
D
showing the
A
––– –––
integral reverse
G
1372
p-n junction diode.
S
g ––– ––– 1.3 V T_J = 25°C, I_S = 195A, V_GS = 0V
–––
–––
39
41
–––
–––
ns
T_J = 25°C
T_J = 125°C
–––
–––
39
46
–––
–––
nC
T_J = 25°C
T_J = 125°C
V_R = 34V,
g ^{IF = 195A}
di/dt = 100A/µs
––– 1.7 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.013mH
R_G = 25Ω, I_AS = 195A, V_GS =10V. Part not recommended for use
above this value .
„ I_SD ≤ 195A, di/dt ≤ 841A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
2
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to applocation note # AN-994.
‰ R_θ is measured at T_J approximately 90°C
Š R_θJC value shown is at time zero
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