IRLS3034TRLPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET

Power MOSFET

Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R_DS(ON) at 4.5V V_GS
l Superior R*Q at 4.5V V_GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD -97364A
IRLS3034PbF
IRLSL3034PbF
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
40V
1.4m:
c ^1.7m:
343A
S ^I_{D (Package Limited)} 195A
D
D
S
G
D²Pak
IRLS3034PbF
S
D
G
TO-262
IRLSL3034PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
d I_AR
Avalanche Current
d E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
kl Junction-to-Case
j Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
c 343
c 243
195
1372
375
2.5
±20
4.6
-55 to + 175
300
x x 10lbf in (1.1N m)
255
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
07/02/09