IRG4PC60U-PPBF Datasheet, PDF (2/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

IRG4PC60U-PPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ----
V_(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 17 ---- ----
∆V_(BR)CES/∆T_J Temperature Coeff. of Breakdown Voltage ---- 0.28 ----
---- 1.7 2.0
V
V
V/°C
V_GE = 0V, I_C = 250µA
V_GE = 0V, I_C = 1.0A
V_GE = 0V, I_C = 1.0mA
I_C = 40A
V_GE = 15V
V_CE(ON)
V_GE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
---- 1.9 ---- _V
---- 1.6 ----
I_C = 75A
See Fig.2, 5
I_C = 40A , T_J = 150°C
3.0 ---- 6.0
V_CE = V_GE, I_C = 250µA
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage ---- -12 ---- mV/°C V_CE = V_GE, I_C = 250µA
g_fe
Forward Transconductance …
44 59 ---- S V_CE ≥ 100V, I_C = 40A
I_CES
Zero Gate Voltage Collector Current
---- ---- 250 _µA V_GE = 0V, V_CE = 600V
---- ---- 2.0
V_GE = 0V, V_CE = 10V, T_J = 25°C
I_GES
Gate-to-Emitter Leakage Current
---- ---- 5000
V_GE = 0V, V_CE = 600V, T_J = 150°C
---- ---- ±100 n A V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
---- 310 320
---- 41 46
---- 110 120
---- 39 ----
---- 42 ----
---- 200
---- 100
---- 0.28 ----
---- 1.1 ----
---- 1.3 1.8
---- 36 ----
---- 42 ----
---- 300 ----
---- 160 ----
---- 2.6 ----
---- 13 ----
---- 5860 ----
---- 370 ----
---- 75 ----
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
I_C = 40A
V_CC = 480V
V_GE = 15V
See Fig. 8
T_J = 25°C
I_C = 40A, V_CC = 480V
V_GE = 15V, R_G = 5.0Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
T_J = 150°C,
I_C = 40A, V_CC = 480V
V_GE = 15V, R_G = 5.0Ω
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
V_GE = 0V
V_CC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
 Repetitive rating; V_GE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, Rg = 5.0W.
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
† When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
‡ Refer to application note # 1023, "Surface Mounting of
Larger Devices."
2
www.irf.com