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IRG4PC60U-PPBF Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT | |||
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PD - 95569
IRG4PC60U-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
 UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching and
>200 kHz in resonant mode.
 Application in UPS, Welding and High Current power
supply.
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
 Solder plated version of industry standard
TO-247AC package.
 Lead-Free
C
G
E
n-channel
UltraFast Speed IGBT
VCES = 600V
VCE(on) typ. = 1.6V
@VGE = 15V, IC = 40A
Benefits
 Generation 4 IGBT's offer highest efficiency available.
 Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
 Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Â
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow TemperatureÂ
Max.
600
75
40
300
300
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfÂin (1.1NÂm)
230 (Time above 183°C
should not exceed 100s)
Units
V
A
V
mJ
W
°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)Â
Weight
Typ.
----
0.24
----
----
6 (0.21)
Max.
0.24
----
40
20
----
Units
°C/W
g (oz)
www.irf.com
1
07/15/04
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